GEMAC

Our laboratory

The main mission of GEMaC laboratory is to run fundamental research with perspectives of application in the fields of physics and material science for tomorrow's electronics and information processing and storage.

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Our research

The research activities of our lab are based on a common expertise in physics and material science in the field of wide gap semiconductors, functional magnetic oxides, molecular materials and nanooptics.

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Experimental facilities

The research activities in GEMaC are based on an important experimental infrastructure dedicated to material elaboration, growth, and characterisation, as well as investigation of their properties.

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2024 PhD thesis offers

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GEMaC: lab tour

GEMaC inauguration

SIMS analyser

Julien Barjon, diamond researcher

Reaching GEMaC

GEMaC laboratory is located on the campus of the UFR des sciences in Versailles (France), Fermat building, 45 avenue des États-Unis.

Last PhD and habilitation defences

Epitaxial growth of thin Fe3O4 films on ZnO by PLD: a perspective for Spintronics

December 20, 2023

Centres colorés contrôlés en position dans le nitrure de bore hexagonal pour l’émission de photons uniques cohérents

December 19, 2023

Modélisation et visualisation de la dynamique spatiotemporelle des matériaux moléculaires à transition de spin

December 5, 2023

» Defence agenda

Last seminars and colloquia

Nano optics with fast electrons

May 23, 2024

MBE Growth of severely lattice mismatched Te compounds and their crystallographic characterizations

April 26, 2024

Excitons dans le nitrure de bore hexagonal et ses homostructures en rotation : propriétés de volume, aux surfaces et aux interfaces

March 25, 2024

Piezoélectricité dans des nanofils de ZnO : dopage et polarité

March 21, 2024

The specific characteristics of ancient materials in the light of their analyses by imaging approaches

March 15, 2024

All the seminars and colloquia

Highlights

	Blue diamonds to understand spin-orbit interaction April 11, 2024 Very high resolution optical absorption measurements have made it possible to understand the light spectrum of boron-doped synthetic diamond, as part of an international collaboration between GEMaC and Kyoto University (Japan).
	Native “imperfections” enables room-temperature p-type conductivity in β-Ga2O3 November 23, 2023 Researchers from GEMaC have demonstrated an important step for the realization of power electronics devices.
	Coherent photons in two dimensions August 25, 2023 Researchers at GEMaC have published two complementary studies demonstrating that single photons emitted by a two-dimensional material are coherent, a property that is essential for applications in quantum computing. This work was the subject of an INP highlight.
	Gallium oxide pushes the limits of silicon for power electronics May 25, 2022 Editor’s Choice and one of the most downloaded papers of the ‘Materials’ (MDPI) journal in the first five months of the year, this review discusses the application of ultra-wide bandgap semiconductors in power electronic devices, focusing in particular on gallium oxide.
	A new theoretical approach reveals the emergence of complex self-organised structures in spin crossover materials January 31, 2022 Researchers from GEMaC laboratory have developed an effective electro-elastic model to simulate phase transitions in spin crossover crystals. The resolution of this model is 50 times faster than the traditionally used model, which has allowed them to reveal a wide variety of complex phenomena.