Ga2O3 and NiO electronic properties and based heterostructures

Type of Contract : Research engineer
Contract Period : 12months (with possibility of prolongation up to 24months)
Expected date of employment : sooner possible
Gross salary will vary depending on experience, starting from 2 900 euro before taxes.
Desired level of education : engineer diploma in material science domain or PhD in experimental physics related to materials;
Contact: Dr. E.Chikoidze, ekaterine.chikoidze@uvsq.fr

Missions
Candidate’s work will be a part of the French national project “Pushing back the boundaries of power electronics : Gallium oxide, the next-generation power semiconductor” (GOTEN), part of Priority Research Programmes and Equipments (PEPR) launched as part of the France 2030 plan. https://www.pepr-electronique.fr/goten/. Project consortium gathers 7 partners from French laboratories. Ga2O3, an oxide semiconductor with a large band gap (~5 eV), is easily doped to obtain n-type, whereas NiO can be p-type. The aim of the work is to develop epitaxial layers, and to carry out a fundamental, in-depth study of their electronic properties, principally the identification of point defects and the study of the electrical conductivity mechanism in relation to other physical properties.
Working place/affiliation will be the GEMaC laboratory in Versailles.

Activities
-Experimental study of Ga2O3 and NiO thin films:

• Electrical contacts (Ohmic/Schottky) preparation: Photo lithography; RF-sputtering; Rapid thermal annealing
• I-V characterization versus temperature
• Hall effect, Resistivity measurements in temperature range [2K-850K]
• Photoconductivity, C-V measurement
• Optical transmittance/reflectance
• X-ray scans (basic measurements)

- RF sputtering NiO thin films
- Data analysis/interpretation
- Assisting in project management tasks: Preparation of scientific reporting and meeting organization
- Very strong involvement in scientific communication: consortium meetings/conferences/publications
- Training/knowledge sharing with PhD and Master students
Required Skills
- Research experience related to wide band gap materials or oxides or electrical engineering is strongly required
- Deep knowledge of physics of solid state physics/physics and chemistry of oxides/ Electronic properties;
- French and English languages: oral and writing (Level B2/C1)
- Extremely good communication (scientific and with team members) skill
- Expertise in several of the following experimental techniques and instrumentations: Electrical contacts deposition/characterization; Electrical transport measurements (I-V; C-V; Hall Effect);
- Chemical Vapor Deposition CVD or RF sputtering deposition
-Experience/basic knowledge of project management
-Ability to respect deadlines and strong willing to share results/knowledge

Work context:
GEMaC is a research laboratory which belongs to CNRS and UVSQ, Paris-Saclay University. It is located in Versailles . As the project involves several French laboratories, traveling to partners’ labs for meetings and experiments will be required.

Constraints and risks
The planned work will be very intense, with deadlines and multitasks. Due to the fact that GEMaC laboratory is a restricted access zone (ZRR) and project is labelled as of interest of national strategy; the restrictions related to candidate’s nationality may be applied by security defense authority.