ALD for oxides

GEMaC laboratory develops an ALD growth reactor with liquid injection for the growth 2" of the functional oxide thin films.
The oxides currently under consideration are the references:
 - SrTiO3 as a perovskite substrate oxide
 - BiFeO3 as a multiferroïc film
for growth on silicium, germanium

MC-050:
 - Miltiprocess capability: DLI-CVD, DLI-ALD, MO-CVD, RTP and RT-CVD
 - Oxidants: H2O / O3 & (O2) CVD
 - Surface treatment: H2 line
 - Direct injection liquid (up to 6 DLI vaporizers):

• use of diluted chemical precursors (liquid or solid)
• use of precursors with low vapor pressure (solid)
• flash atomization & vaporization (a few ms)
• sources at room temperature

Process chamber (cold wall reactor):
 - Rapid Thermal Annealing (RTA) up to 1100°C
 - Infrared halogen lamp heating
 - Atmosphere to 1e-3 mbar

This equipment was subsidized via « AXION » (Flagship LabEx NanoSaclay IDEX ParisSaclay) and « OGRAAL » (DIM Oxymore – région IdF) projects

Annealsys MC-050
DLI-CVD/ALD


Schematic representation of the reactor