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Pre- and post-growth processing
High temperature annealing furnace
Model: Elite Thermal Systems TSH16/50/180
Annealing up to 1 600 °C under nitrogen flow, dedicated to semiconducting diamond.
Hydrogenation / Deuteration by capacitive plasma RF 13.56 MHz
For III-V, II-VI semiconductors
Model: reactor MECA2000
Conditions: 1 Torr, 25 - 500°C
Either sample in the plasma, or downstream (remote)
Hydrogenation / Deuteration by microwave plasma 1.45 GHz
For diamond
Model: Materia reactor used for diamond growth
Conditions: 10-20 Torr, 450 - 1 000 °C
