Metal Organic Chemical Vapor Deposition II-VI

GEMaC has two MOCVD (Metal Organic Chemical Vapor Deposition) growth systems devoted to the growth of structures based II/VI semiconductors.

horizontal reactor (SAT)

Main characteristics of the system :
Sources : - Elements II : Zn, Mg, Cd
- Elements VI : t-butanol, N2O
- Doping : Al, Sb, NH3
Carrier Gas : He, H2, Ar, N2
Pressure : low pressure (30 torr) to 1 atm
Temperature: induction heating up to 1000°C
Substrates size : up to 2x2’’

Contacts : Corinne Sartel/Vincent Sallet

vertical reactor

Main characteristics of the system :
Sources: - Elements II : Zn, Mg,
- Elements VI : t-butanol, N2O, Se
- Doping : Al,
Carrier Gas : He, H2, Ar, N2
Pressure : atmospheric pressure
Temperature : RF heating → 900°C
Substrates size : ~1cm2

Contacts : Gaelle Amiri/Vincent Sallet